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所有功能 Single die integrating an NFC controller, a secure element and a UWB secure, fine-ranging subsystem host Small,
2021-06-01 14:10:12所有功能 Configurable cellular network connectivity by a trusted partner Compliant with 2G / 3G / 4G (LTE) / CDMA / NB-I
2021-06-01 14:10:11所有功能 Remote SIM provisioning compliant with GSMA M2M and SIMalliance specifications Bootstrap connectivity profile p
2021-06-01 14:10:09所有功能Cellular network connectivity configuration provided by trusted partnersCompliant with 2G / 3G / 4G (LTE) / CDMA
2021-06-01 14:10:08所有功能AEC-Q100 grade 0 conform qualificationCompatible with the serial peripheral interface (SPI) busMemory array 4 M
2021-06-01 14:10:07所有功能AEC-Q100 grade 0 conform qualificationCompatible with the serial peripheral interface (SPI) busMemory array 4 M
2021-06-01 14:10:06所有功能Compatible with the Serial Peripheral Interface (SPI) busMemory array 64 Kb (8 Kbytes) of EEPROM Page size: 32 b
2021-06-01 14:10:05所有功能Compatible with the Serial Peripheral Interface (SPI) busMemory array 32 Kb (4 Kbytes) of EEPROM Page size: 32 b
2021-06-01 14:10:03所有功能Compatible with the Serial Peripheral Interface (SPI) busMemory array 16 Kb (2 Kbytes) of EEPROM Page size: 32 b
2021-06-01 14:10:02所有功能Compatible with SPI bus serial interface (Positive clock SPI modes)Single supply voltage: 2.5 V to 5.5 V for M95
2021-06-01 14:10:00所有功能Industry standard MICROWIRE™ busSingle supply voltage: 2.5 V to 5.5 V for M93Cx6-W 1.8 V to 5.5 V for M93Cx6-RD
2021-06-01 14:09:59所有功能Packages Compatible with following I2C bus modes: 400 kHz100 kHz Memory array: 16 Kbit (2 Kbyte) of EEPROMPa
2021-06-01 14:09:58所有功能Compatible with I2C bus modes: 400 kHz 100 kHzMemory array: 1 Kbit (128 bytes) of EEPROM 2 Kbit (256 bytes) of E
2021-06-01 14:09:57所有功能Compatible with I2C bus modes: 400 kHz 100 kHzMemory array: 1 Kbit (128 bytes) of EEPROM 2 Kbit (256 bytes) of E
2021-06-01 14:09:56所有功能Compatible with I2C bus modes: 400 kHz 100 kHzMemory array: 1 Kbit (128 bytes) of EEPROM 2 Kbit (256 bytes) of E
2021-06-01 14:09:55所有功能IPM 3 A, 600 V, RDS(on) = 1.6 Ω, 3-phase Power MOSFET inverter bridge including control ICs for gate drivingOpt
2021-06-01 14:09:53所有功能Reduced switching lossesLower RDS(on) per area vs previous generationLow gate input resistance100% avalanche tes
2021-06-01 14:09:52所有功能Very fast and robust intrinsic body diodeExtremely low gate charge and input capacitanceVery high operating junc
2021-06-01 14:09:51所有功能Very fast and robust intrinsic body diodeExtremely low gate charge and input capacitanceSource sensing pin for i
2021-06-01 14:09:50所有功能Very high operating junction temperature capability (TJ = 175 °C)Very fast and robust intrinsic body diodeExtre
2021-06-01 14:09:49周一至周五
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