SCTH40N120G2V-7 - Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package, SCT

所有功能

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• Very high operating junction temperature capability (T_J = 175 °C)
• Very fast and robust intrinsIC body diode
• Extremely low gate charge and input capacitance
• Source Kelvin pin for increased efficiency

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