STGW100H65FB2-4 - Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pack

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V_CE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifICally designed to maximize efficiency for a wide range of fast applications.

主要特性

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• Maximum junction temperature: T_J = 175 °C
• Low V_CE(sat) = 1.55 V(typ.) @ I_C = 100 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive V_CE(sat) temperature coefficient
• Excellent switching performance thanks to the extra driving kelvin pin

PDF下载地址：（复制到浏览器地址栏）
https://www.st.com/resource/en/datasheet/stgw100h65fb2-4.pdf